IRG4PSC71U ultrafast speed igbt insulated gate bipolar transistor pd - 91681a e c g n-channel features ? ultrafast switching speed optimized for operating frequencies 8 to 40khz in hard switching, 200khz in resonant mode soft switching ? generation 4 igbt design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations ? industry-benchmark super-247 package with higher power handling capability compared to same footprint to-247 ? creepage distance increased to 5.35mm ? generation 4 igbt's offer highest efficiencies available ? maximum power density, twice the power handling of the to-247, less space than to-264 ? igbts optimized for specific application conditions ? cost and space saving in designs that require multiple, paralleled igbts benefits v ces = 600v v ce(on) typ. = 1.67v @v ge = 15v, i c = 60a parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 85 ? i c @ t c = 100c continuous collector current 60 a i cm pulsed collector current 200 i lm clamped inductive load current 200 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy a a a a a 180 mj p d @ t c = 25c maximum power dissipation 350 p d @ t c = 100c maximum power dissipation 140 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) c absolute maximum ratings w 5/12/99 www.irf.com 1 super - 247 parameter min. typ. max. units r q jc junction-to-case CCC CCC 0.36 r q cs case-to-sink, flat, greased surface CCC 0.24 CCC c/w r q ja junction-to-ambient, typical socket mount CCC CCC 38 recommended clip force 20.0(2.0) CCC CCC n (kgf) weight CCC 6 (0.21) CCC g (oz) thermal resistance\ mechanical
IRG4PSC71U 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) CCC 340 520 i c = 60a q ge gate - emitter charge (turn-on) CCC 44 66 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) CCC 160 240 v ge = 15v t d(on) turn-on delay time CCC 34 CCC t r rise time CCC 50 CCC t j = 25c t d(off) turn-off delay time CCC 56 84 i c = 60a, v cc = 480v t f fall time CCC 86 130 v ge = 15v, r g = 5.0 w e on turn-on switching loss CCC 0.42 CCC energy losses include "tail" e off turn-off switching loss CCC 1.99 CCC mj see fig. 10, 11, 13, 14 e ts total switching loss CCC 2.41 3.2 t d(on) turn-on delay time CCC 30 CCC t j = 150c, t r rise time CCC 49 CCC i c = 60a, v cc = 480v t d(off) turn-off delay time CCC 129 CCC v ge = 15v, r g = 5.0 w t f fall time CCC 175 CCC energy losses include "tail" e ts total switching loss CCC 4.5 CCC mj see fig. 13, 14 l e internal emitter inductance CCC 13 CCC nh measured 5mm from package c ies input capacitance CCC 7500 CCC v ge = 0v c oes output capacitance CCC 720 CCC pf v cc = 30v see fig. 7 c res reverse transfer capacitance CCC 93 CCC ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 CCC CCC v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? ? ? ? ? 18 CCC CCC v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage CCC 0.45 CCC v/c v ge = 0v, i c = 5.0ma CCC 1.67 2.0 i c = 60a v ge = 15v v ce(on) collector-to-emitter saturation voltage CCC 1.95 CCC i c = 100a see fig.2, 5 CCC 1.71 CCC i c = 60a , t j = 150c v ge(th) gate threshold voltage 3.0 CCC 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage CCC -10 CCC mv/c v ce = v ge , i c = 1.0ma g fe forward transconductance ? ? ? ? ? 47 70 CCC s v ce = 50v, i c = 60a CCC CCC 500 v ge = 0v, v ce = 600v CCC CCC 2.0 v ge = 0v, v ce = 10v, t j = 25c CCC CCC 5.0 ma v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. notes: ? repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) ? v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 5.0 w , (see fig. 13a) ? repetitive rating; pulse width limited by maximum junction temperature. ? current limited by the package, (die current = 100a)
IRG4PSC71U www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 150 c j t = 25 c j 0 30 60 90 120 150 0.1 1 10 100 f, f reque ncy (kh z) load current (a) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 58w 1 10 100 1000 1.0 1.5 2.0 2.5 3.0 3.5 v , collector-to-emitter voltage (v) i , collector current (a) ce c v = 15v 80 s pulse width ge t = 25 c j t = 150 c j ic , collector-to-emitter current (a)
IRG4PSC71U 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 120 c i = a 60 c i = a 30 c maximum dc collector current (a) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1 t , rectan g ular pulse duration (sec) a d = 0.50 0.20 0.10 0.05 0.02 0.01 sin gle pu lse (thermal response) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c thermal response (z thjc ) 0 20 40 60 80 100 25 50 75 100 125 150 t , case temperature (c) c a v = 1 5v limited by package ge
IRG4PSC71U www.irf.com 5 fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 1 10 100 0 2000 4000 6000 8000 10000 12000 14000 v , collector-to-emitter volta g e (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res 0 100 200 300 400 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 60a cc c 0 10 20 30 40 50 2.0 3.0 4.0 5.0 6.0 7.0 8.0 r , gate resistance total switching losses (mj) g v = 480v v = 15v t = 25 c i = 60a cc ge j c ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = 5.0ohm v = 15v v = 480v g ge cc i = a 120 c i = a 60 c i = a 30 c w
IRG4PSC71U 6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 1 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c 20 40 60 80 100 120 0 2 4 6 8 10 12 14 i , collector current (a) total switching losses (mj) c r = 5.0ohm t = 150 c v = 480v v = 15v g j cc ge w
IRG4PSC71U www.irf.com 7 480v 4 x i c @ 25c d.u.t. 50v l v * c ? ? * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) ? ? ? fig. 14b - switching loss waveforms 50v d river* 1000v d.u.t. i c c v ? ? ? l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
IRG4PSC71U 8 www.irf.com case outline and dimensions super-247 dimensions are shown in millimeters world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 5/99
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